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Why power modules may fail in the real world

Posted on
May 21, 2025

CTE mismatch is an inherent problem

If all the materials within a power module — extending through its connections to the circuit board and heatsink — were homogenous, temperature swings would pose little stress. In reality, however, the materials in the thermal path in a typical module include a mix of materials such as silicon, copper, ceramic, fiberglass, aluminum, solder, and others. Encapsulant around the internal components might be present, squeezing and pulling. The materials all have differing Coefficients of Thermal Expansion (CTE), which is the ratio that a material’s linear dimension changes with temperature, usually stated in units of micrometers per meter per degree Kelvin (µm/m.K). Aluminum for example, has a CTE of about 23 µm/m·K, while at the other extreme, a silicon die has a value of about 3. For example, with a 100°C temperature change — a realistic scenario for a power semiconductor — the aluminum bond wire attachment area expands about eight times more than the silicon die beneath it. This equates to a dimensional change of approximately 2.3 µm compared to just 0.3 µm over a 1 mm length.

The latest DC/DC module power switches are often wide band-gap silicon carbide or gallium nitride types. While their CTEs are higher than silicon, around 4 and 5 respectively, at least they are closer in value to the materials they typically interface with.

For high power density DC/DCs, these switches are now almost exclusively ball-grid or land-grid array packaging, rather than traditional leaded types, which previously offered some degree of mechanical stress relief across one of the larger CTE mismatches — from lead frame through the solder to the copper traces. Through the stack of materials from the motherboard to the die and perhaps on to top-side cooling, the multiple CTE mismatches in a power module can potentially cause problems, such as microcracking or even detachment.

Cross‑section diagram of an electronic package showing materials with their coefficients of thermal expansion, including silicon die, leadframe, solder, copper, FR4, encapsulant, aluminum bond wire, and nickel plating.

Picture: An example of a mounted power semiconductor and its multiple material CTEs

An optimum reliability test

Traditionally, equipment or modules have been life-tested at constant temperatures or with controlled, repeated ambient temperature changes, typically at ramp rates of around 15°C per minute. Thermal shock tests push this further, often reaching around 40°C per minute. While such tests are standard for independent agencies, a more realistic approach is to simulate the actual end-use environment. In data center applications, for example, ambient temperatures tend to remain stable, while load levels fluctuate with defined patterns, ramp rates, and repetition. It’s clear that the thermal stress effects from this approach would be quite different from those caused by a fixed load and varying ambient temperature.

Flex Power Modules designs its power modules to minimize issues related to CTE mismatch and conducts thermal testing based on typical market conditions. However, we also collaborate closely with customers to simulate their specific application environments, enabling a more accurate and credible, real-world reliability assessment.