
Silicon carbide (SiC) is shaping the future of electric vehicles, delivering greater efficiency and performance in onboard chargers and DC/DC converters. To help engineers address the design complexities of current sensing in these applications, we collaborated with Texas Instruments for a closer look at some of the leading sensing and protection methods.
In this expert conversation, Mark Ng, Director of Automotive Systems at Texas Instruments, and Andreas Heim, Vice President of Engineering for Automotive at Flex, break down key approaches to short-circuit protection for SiC power MOSFETs—including shunt-based, desaturation, and hall-effect current sensing.
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